Diffusion practice problems
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Read the Diffusion example calculations class notes.

Boron is diffused into a silicon wafer using a two-step process. The process parameters are:

• deposition temperature: T₁ = 900°C
• deposition time: t₁ = 95 min
• drive temperature: T₂ = 1100°C
• drive time: t₂ = 90 min.

The wafer has a constant background doping of N_B = 1x10¹⁶ cm^–3.

The surface concentration during the depositon step is determined by the solid-solubility limit.
For this diffusion use N_s = 1x10²⁰ cm^–3.

Answer